Proposal for a Si and GaAs double-junction solar cell: Characterization and simulation

Authors

  • Willian Bazilio PUC-Rio
  • Rudy Kawabata Departament of Electrical Engineering, Pontifical Catholic University of Rio de Janeiro
  • Guilherme Torelly Departament of Electrical Engineering, Pontifical Catholic University of Rio de Janeiro
  • Patricia Lustoza de Souza Departament of Electrical Engineering, Pontifical Catholic University of Rio de Janeiro
  • Daniel Louzada PostGraduate Program in Metrology, Pontifical Catholic University of Rio de Janeiro https://orcid.org/0000-0001-9753-8162
  • Rodrigo Flora Calili PostGraduate Program in Metrology, Pontifical Catholic University of Rio de Janeiro

DOI:

https://doi.org/10.21014/actaimeko.v14i4.2030

Keywords:

tandem solar cell, electrical measure, III-V on Si, SCAPS simulation

Abstract

Integrating III-V solar cells with silicon (Si) shows great promise for advancing commercial solar cell technology. Various methods exist to combine III-V and silicon, each presenting unique obstacles. Our study focuses on different III-V solar cell configurations to enhance their compatibility with silicon cells. Using the SCAPS software, we conducted simulations to design an ideal III-V device that closely aligns with commercially available Si solar cells. By optimizing the base layer's thickness and doping level during the simulations, we achieved an impressive efficiency of 25.0 %.

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Published

2025-12-31

Issue

Vol. 14 No. 4 (2025)

Section

Research Papers

License

Copyright (c) 2025 Willian Bazilio, Rudy Kawabata, Guilherme Torelly, Patricia Lustoza de Souza, Daniel Louzada, Rodrigo Flora Calili

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